MOSFET N/P-CH 30V 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Power - Max [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | FET Feature | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 650 pF | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 2.5 W | 30 V | 33 nC | N and P-Channel | Logic Level Gate | 29 mOhm |
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 650 pF | 1 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 2.5 W | 30 V | 33 nC | N and P-Channel | Logic Level Gate | 29 mOhm |