Specification	IR2101SPBF

Channel Type	Independent
Current - Peak Output (Sink)	360 mA
Current - Peak Output (Source)	210 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	100 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2101 Series

Part	Gate Type	Driven Configuration	Input Type	Number of Drivers	Gate Channel	Channel Type	Logic Voltage - VIL	Logic Voltage - VIH	Package Name	High Side Voltage - Max (Bootstrap)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Width
INFINEON IR2101STR	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-SOIC	600 V	360 mA	210 mA	Surface Mount	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.154 in	3.9 mm
INFINEON IR2101PBF	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-DIP 8-PDIP	600 V	360 mA	210 mA	Through Hole	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.3 in	7.62 mm
INFINEON IR2101PBF	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-DIP 8-PDIP	600 V	360 mA	210 mA	Through Hole	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.3 in	7.62 mm
INFINEON IR2101S	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-SOIC	600 V	360 mA	210 mA	Surface Mount	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.154 in	3.9 mm
INFINEON IR2101	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-DIP 8-PDIP	600 V	360 mA	210 mA	Through Hole	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.3 in	7.62 mm
INFINEON IR2101SPBF	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-SOIC	600 V	360 mA	210 mA	Surface Mount	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.154 in	3.9 mm

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