IR2101 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Driven Configuration	Input Type	Number of Drivers	Gate Channel	Channel Type	Logic Voltage - VIL	Logic Voltage - VIH	Package Name	High Side Voltage - Max (Bootstrap)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Width
INFINEON IR2101STR	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-SOIC	600 V	360 mA	210 mA	Surface Mount	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.154 in	3.9 mm
INFINEON IR2101PBF	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-DIP 8-PDIP	600 V	360 mA	210 mA	Through Hole	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.3 in	7.62 mm
INFINEON IR2101PBF	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-DIP 8-PDIP	600 V	360 mA	210 mA	Through Hole	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.3 in	7.62 mm
INFINEON IR2101S	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-SOIC	600 V	360 mA	210 mA	Surface Mount	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.154 in	3.9 mm
INFINEON IR2101	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-DIP 8-PDIP	600 V	360 mA	210 mA	Through Hole	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.3 in	7.62 mm
INFINEON IR2101SPBF	IGBT MOSFET N-Channel MOSFET	Half-Bridge	Non-Inverting	2	N-Channel	Independent	0.8 V	3 V	8-SOIC	600 V	360 mA	210 mA	Surface Mount	10 VDC	20 V	100 ns	50 ns	-40 °C	150 °C	0.154 in	3.9 mm