Description
General part information
BSZ110 Series
The BSZ110N06NS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ110N06NS3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 33 nC |
| Input Capacitance (Ciss) (Max) | 2700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PG-TSDSON-8 |
| Power Dissipation (Max) | 2.1 W, 50 W |
| Rds On (Max) | 11 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part