BSZ110 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;
| Part | Vgs(th) (Max) | Gate Charge (Max) | Mounting Type | FET Type | Package / Case | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Technology | Package Name | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 4 V | 33 nC | Surface Mount | N-Channel | 8-PowerVDFN | 11 mOhm | 10 V | -55 °C | 150 °C | 60 V | 2700 pF | 20 A | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1 W 50 W | 20 V | ||
INFINEON | 3.8 V | 18.5 nC | Surface Mount | N-Channel | 8-PowerTDFN | 11 mOhm | -55 °C | 150 °C | 80 V | 1300 pF | 40 A | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 50 W | 20 V | 6 V | 10 V |