STH265N6F6-6AG

Obsolete

STMicroelectronics

MOSFET N-CH 60V 180A H2PAK-6

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Obsolete

STMicroelectronics

MOSFET N-CH 60V 180A H2PAK-6

Technical Specifications

Parameters and characteristics for this part

Specification	STH265N6F6-6AG

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	183 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	11800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	H2PAK-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Qualification	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Grade
STMicroelectronics STH265N6F6-6AG	300 W	H2PAK-6	11800 pF	N-Channel	-55 °C	175 ░C	Surface Mount	2.1 mOhm	180 A	60 V	MOSFET (Metal Oxide)	183 nC	4 V	AEC-Q101	20 V	10 V	D2PAK TO-263-7	Automotive
STMicroelectronics STH265N6F6-2AG	300 W	H2Pak-2	11800 pF	N-Channel	-55 °C	175 ░C	Surface Mount	2.1 mOhm	180 A	60 V	MOSFET (Metal Oxide)	183 nC	4 V	AEC-Q101	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6

Technical documentation and resources

No documents available