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MOSFET N-CH 60V 180A H2PAK-6
| Part | Power Dissipation (Max) [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Qualification | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 300 W | H2PAK-6 | 11800 pF | N-Channel | -55 °C | 175 ░C | Surface Mount | 2.1 mOhm | 180 A | 60 V | MOSFET (Metal Oxide) | 183 nC | 4 V | AEC-Q101 | 20 V | 10 V | D2PAK TO-263-7 | Automotive |
STMicroelectronics | 300 W | H2Pak-2 | 11800 pF | N-Channel | -55 °C | 175 ░C | Surface Mount | 2.1 mOhm | 180 A | 60 V | MOSFET (Metal Oxide) | 183 nC | 4 V | AEC-Q101 | 20 V | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Automotive |