STW21N150K5

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STMicroelectronics

N-CHANNEL 1500 V, 0.7 OHM TYP., 14 A MDMESH K5 POWER MOSFET IN A TO-247 PACKGE

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STW21N150K5

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STMicroelectronics

N-CHANNEL 1500 V, 0.7 OHM TYP., 14 A MDMESH K5 POWER MOSFET IN A TO-247 PACKGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW21N150K5	STW21 Series

Current - Continuous Drain (Id) @ 25°C	14 A	14 - 18.5 A
Drain to Source Voltage (Vdss)	1500 V	900 - 1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	43 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC	89 nC
Input Capacitance (Ciss) (Max) @ Vds	-	1645 pF
Input Capacitance (Ciss) (Max) @ Vds [Max]	3145 pF	3145 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	446 W	446 W
Power Dissipation (Max)	-	250 W
Rds On (Max) @ Id, Vgs	-	299 mOhm
Rds On (Max) @ Id, Vgs [Max]	900 mOhm	900 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	5 V	5 V

STW21 Series

N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW21N90K5	TO-247-3	900 V	Through Hole	43 nC	30 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	5 V	250 W	18.5 A	N-Channel	1645 pF	299 mOhm	10 V
STMicroelectronics STW21N150K5	TO-247-3	1500 V	Through Hole		30 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	5 V		14 A	N-Channel			10 V	3145 pF	446 W	900 mOhm	89 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 13.06
		30	$ 10.57
		120	$ 9.95
		510	$ 9.02
		1020	$ 8.27
Newark	Each	1	$ 18.54
		10	$ 15.78
		25	$ 13.01
		50	$ 12.42
		100	$ 11.82
		250	$ 11.68

Description

General part information

STW21 Series

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

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STW21N150K5

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STW21N150K5

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Technical Specifications

STW21 Series

Pricing

Description

STW21 Series

Documents

Datasheet

UM1575

AN2842

TN1224

DS10542

AN4337

TN1225

AN2344

TN1156

TN1378

AN4250

Technical Specifications

STW21 Series