STW21 Series

N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package

Catalog

N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW21N90K5	TO-247-3	900 V	Through Hole	43 nC	30 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	5 V	250 W	18.5 A	N-Channel	1645 pF	299 mOhm	10 V
STMicroelectronics STW21N150K5	TO-247-3	1500 V	Through Hole		30 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	5 V		14 A	N-Channel			10 V	3145 pF	446 W	900 mOhm	89 nC

Catalog

N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package

Description

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.