IPB029N06N3GE8187ATMA1

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Infineon Technologies

TRANS MOSFET N-CH 60V 120A 3-PIN(2+TAB) D2PAK T/R

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Infineon Technologies

TRANS MOSFET N-CH 60V 120A 3-PIN(2+TAB) D2PAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IPB029N06N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	13000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB029N06N3GATMA1	20 V	-55 °C	175 ░C	188 W	MOSFET (Metal Oxide)	13000 pF	120 A	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.9 mOhm	165 nC	4 V	60 V	10 V
Infineon Technologies IPB029N06N3GE8187ATMA1	20 V	-55 °C	175 ░C	188 W	MOSFET (Metal Oxide)	13000 pF	120 A	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		165 nC	4 V	60 V	10 V	3.2 mOhm

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General part information

N-Channel 60 V 120A (Tc) 188W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources