IPB029 Series

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; D2PAK TO-263 PACKAGE; 2.9 MOHM;

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB029N06N3GATMA1	20 V	-55 °C	175 ░C	188 W	MOSFET (Metal Oxide)	13000 pF	120 A	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.9 mOhm	165 nC	4 V	60 V	10 V
Infineon Technologies IPB029N06N3GE8187ATMA1	20 V	-55 °C	175 ░C	188 W	MOSFET (Metal Oxide)	13000 pF	120 A	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		165 nC	4 V	60 V	10 V	3.2 mOhm