PMV213SN,215
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
PMV213SN,215
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
Description
General part information
PMV213SN Series
N-channel TrenchMOS standard level FET
Technical Specifications
Parameters and characteristics for this part
| Specification | PMV213SN,215 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1.9 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7 nC |
| Input Capacitance (Ciss) (Max) | 330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 280 mW |
| Rds On (Max) | 250 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Questions about package outline drawings
RC Thermal Models
LFPAK MOSFET thermal design guide, Chinese version
LFPAK MOSFET thermal design guide - Part 2
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Nexperia package poster
Power MOSFET frequently asked questions and answers
Understanding power MOSFET data sheet parameters
Failure signature of Electrical Overstress on Power MOSFETs
Using power MOSFETs in parallel
Wave soldering profile
Reel pack for SMD, 7"; Q3/T4 product orientation
Understanding power MOSFET data sheet parameters
Reflow soldering profile