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N-channel TrenchMOS standard level FET
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N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET
| Part | Power Dissipation (Max) | Mounting Type | Package Name | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Vgs (Max) | Rds On (Max) | FET Type | Vgs(th) (Max) | Gate Charge (Max) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 280 mW | Surface Mount | TO-236AB | 330 pF | 1.9 A | 30 V | 250 mOhm | N-Channel | 4 V | 7 nC | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 10 V | 100 V | MOSFET (Metal Oxide) |