The UCC27712-Q1 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range from 10 V to 22 V, and offers UVLO protection for both the VDD and HB bias supply.

Technical Specifications

Parameters and characteristics for this part

Specification	UCC27712EVM-287

Contents	Board
Function	Gate Driver
Supplied Contents	Board(s)
Type	Power Management
Utilized IC / Part	UCC27712

UCC27712 Series

Automotive 1.8-A/2.8-A, 620V half bridge gate driver with interlock

Part	Supplied Contents	Utilized IC / Part	Type	Function	Contents	High Side Voltage - Max (Bootstrap)	Number of Drivers	Package Name	Grade	Mounting Type	Package Length	Package Width	Logic Voltage - VIL	Logic Voltage - VIH	Current - Peak Output (Sink)	Current - Peak Output (Source)	Operating Temperature (Max)	Operating Temperature (Min)	Driven Configuration	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Rise Time (Typ)	Fall Time (Typ)	Gate Channel	Gate Type	Channel Type	Qualification
Texas Instruments UCC27712EVM-287	Board(s)	UCC27712	Power Management	Gate Driver	Board
Texas Instruments UCC27712QDRQ1						600 V	2	8-SOIC	Automotive	Surface Mount	0.154 in	3.9 mm	1.5 V	1.6 V	2.8 A	1.8 A	125 °C	-40 °C	Half-Bridge	10 VDC	20 V	16 ns	10 ns	N-Channel P-Channel	IGBT MOSFET N-Channel P-Channel MOSFET	Independent	AEC-Q100
Texas Instruments UCC27712D						600 V	2	8-SOIC		Surface Mount	0.154 in	3.9 mm	0.8 V	2.4 V	2.8 A	1.8 A	125 °C	-40 °C	Half-Bridge	10 VDC	20 V	16 ns	10 ns	N-Channel P-Channel	IGBT MOSFET N-Channel P-Channel MOSFET	Independent
Texas Instruments UCC27712DR						600 V	2	8-SOIC		Surface Mount	0.154 in	3.9 mm	1.5 V	1.6 V	2.8 A	1.8 A	125 °C	-40 °C	Half-Bridge	10 VDC	20 V	16 ns	10 ns	N-Channel P-Channel	IGBT MOSFET N-Channel P-Channel MOSFET	Independent
Texas Instruments UCC27712QDQ1						600 V	2	8-SOIC	Automotive	Surface Mount	0.154 in	3.9 mm	0.8 V	2.4 V	2.8 A	1.8 A	125 °C	-40 °C	Half-Bridge	10 VDC	20 V	16 ns	10 ns	N-Channel P-Channel	IGBT MOSFET N-Channel P-Channel MOSFET	Independent	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

UCC27712EVM-287 | Datasheet