STS3P6F6

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STMicroelectronics

MOSFET P-CH 60V 3A 8SOIC

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STMicroelectronics

MOSFET P-CH 60V 3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	STS3P6F6

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	160 mΩ
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET P-CH 60V 3A 8SOIC

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Technology
STMicroelectronics STS3P6F6	P-Channel	-55 °C	150 °C	6.4 nC	2.7 W	8-SOIC	160 mΩ	10 V	4 V	340 pF	60 V	20 V	3 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 3A (Tj) 2.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources