MOSFET P-CH 60V 3A 8SOIC
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STS3P6F6 | P-Channel | -55 °C | 150 °C | 6.4 nC | 2.7 W | 8-SOIC | 160 mΩ | 10 V | 4 V | 340 pF | 60 V | 20 V | 3 A | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) |