Specification	STFI10N65K3

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	42 nC
Input Capacitance (Ciss) (Max)	1180 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	I2PAK, TO-262-3 Full Pack
Package Name	TO-281 (I2PAKFP)
Power Dissipation (Max)	35 W
Rds On (Max)	1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

STFI10N Series

Part	Vgs (Max)	Gate Charge (Max)	Rds On (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs(th) (Max)	Package Name
STMicroelectronics STFI10N65K3	30 V	42 nC	1 Ohm	N-Channel	-55 °C	150 °C	10 V	35 W	MOSFET (Metal Oxide)	650 V	10 A	I2PAK TO-262-3 Full Pack	1180 pF	Through Hole	4.5 V	TO-281 (I2PAKFP)
STMicroelectronics STFI10N62K3	30 V	42 nC	750 mOhm	N-Channel	-55 °C	150 °C	10 V	30 W	MOSFET (Metal Oxide)	620 V	8.4 A	I2PAK TO-262-3 Full Pack	1250 pF 1250 pF	Through Hole	4.5 V	TO-281 (I2PAKFP)
STMicroelectronics STFI10NK60Z	30 V	70 nC	750 mOhm	N-Channel	-55 °C	150 °C	10 V	35 W	MOSFET (Metal Oxide)	600 V	10 A	I2PAK TO-262-3 Full Pack	1370 pF	Through Hole	4.5 V	TO-281 (I2PAKFP)

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