STFI10N65K3

Obsolete

STMicroelectronics

MOSFET N-CH 650V 10A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 10A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI10N65K3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STFI10N65K3	30 V	10 V	TO-262-3 Full Pack I2PAK	1 Ohm	4.5 V	10 A	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-281 (I2PAKFP)	650 V	-55 °C	150 °C	35 W	42 nC
STMicroelectronics STFI10N62K3	30 V	10 V	TO-262-3 Full Pack I2PAK	750 mOhm	4.5 V	8.4 A	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-281 (I2PAKFP)	620 V	-55 °C	150 °C		42 nC	1250 pF
STMicroelectronics STFI10NK60Z	30 V	10 V	TO-262-3 Full Pack I2PAK	750 mOhm	4.5 V	10 A	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-281 (I2PAKFP)	600 V	-55 °C	150 °C	35 W			1370 pF	70 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 10A (Tc) 35W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources