MOSFET N-CH 650V 10A I2PAKFP
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 30 V | 10 V | TO-262-3 Full Pack I2PAK | 1 Ohm | 4.5 V | 10 A | MOSFET (Metal Oxide) | N-Channel | Through Hole | TO-281 (I2PAKFP) | 650 V | -55 °C | 150 °C | 35 W | 42 nC | |||
STMicroelectronics | 30 V | 10 V | TO-262-3 Full Pack I2PAK | 750 mOhm | 4.5 V | 8.4 A | MOSFET (Metal Oxide) | N-Channel | Through Hole | TO-281 (I2PAKFP) | 620 V | -55 °C | 150 °C | 42 nC | 1250 pF | |||
STMicroelectronics | 30 V | 10 V | TO-262-3 Full Pack I2PAK | 750 mOhm | 4.5 V | 10 A | MOSFET (Metal Oxide) | N-Channel | Through Hole | TO-281 (I2PAKFP) | 600 V | -55 °C | 150 °C | 35 W | 1370 pF | 70 nC |