Technical Specifications
Parameters and characteristics for this part
| Specification | BSP170PH6327XTSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.9 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 1.8 W |
| Rds On (Max) @ Id, Vgs | 300 mOhm |
| Supplier Device Package | PG-SOT223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSP170 Series
Infineon technologies offers automotive and industrial manufacturers a broad portfolio ofN and P-Channel Small Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety ofapplicationsincludingLED lighting,ADAS,body control units,SMPSandmotor control.
Documents
Technical documentation and resources