Beta
⌘K
P-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR (FET), -60 V, SOT-223
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.8 W | 14 nC | 20 V | Surface Mount | MOSFET (Metal Oxide) | 10 V | PG-SOT223-4 | 410 pF | P-Channel | 300 mOhm | -55 °C | 150 °C | TO-261-4 TO-261AA | 4 V | 60 V | 1.9 A |