SSM6K406TU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4.4A UF6

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4.4A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K406TU,LF

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	490 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Package / Case	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage SSM6K406TU,LF	UF6	500 mW	N-Channel	6-SMD Flat Leads	2.5 V	30 V	4.5 V 10 V	4.4 A	20 V	150 °C	12.4 nC	MOSFET (Metal Oxide)	25 mOhm	Surface Mount	490 pF

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General part information

N-Channel 30 V 4.4A (Ta) 500mW (Ta) Surface Mount UF6

Technical documentation and resources