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MOSFET N-CH 30V 4.4A UF6
| Part | Supplier Device Package | Power Dissipation (Max) [Max] | FET Type | Package / Case | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | UF6 | 500 mW | N-Channel | 6-SMD Flat Leads | 2.5 V | 30 V | 4.5 V 10 V | 4.4 A | 20 V | 150 °C | 12.4 nC | MOSFET (Metal Oxide) | 25 mOhm | Surface Mount | 490 pF |