IPI60R380C6XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 10.6A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 10.6A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI60R380C6XKSA1

Current - Continuous Drain (Id) @ 25°C	10.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type
Infineon Technologies IPI60R380C6XKSA1	3.5 V	I2PAK TO-262-3 Long Leads TO-262AA	20 V	32 nC	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	83 W	380 mOhm	700 pF	PG-TO262-3	Through Hole	10 V	10.6 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10.6A (Tc) 83W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available