Beta
⌘K
MOSFET N-CH 600V 10.6A TO262-3
| Part | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.5 V | I2PAK TO-262-3 Long Leads TO-262AA | 20 V | 32 nC | MOSFET (Metal Oxide) | 600 V | -55 °C | 150 °C | 83 W | 380 mOhm | 700 pF | PG-TO262-3 | Through Hole | 10 V | 10.6 A | N-Channel |