STFI15N95K5

Obsolete

STMicroelectronics

MOSFET N-CH 950V 7.5A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 950V 7.5A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI15N95K5

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	855 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	30 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STFI15N95K5	N-Channel	5 V	7.5 A	-55 °C	150 °C	TO-262-3 Full Pack I2PAK	MOSFET (Metal Oxide)	30 V	855 pF	30 W	Through Hole	950 V	TO-281 (I2PAKFP)	500 mOhm	30 nC	10 V
STMicroelectronics STFI15NM65N	N-Channel	4 V	12 A	-55 °C	150 °C	TO-262-3 Full Pack I2PAK	MOSFET (Metal Oxide)	25 V	983 pF		Through Hole	650 V	TO-281 (I2PAKFP)	380 mOhm		10 V	33.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 950 V 7.5A (Ta) 30W Through Hole TO-281 (I2PAKFP)

Technical documentation and resources