MOSFET N-CH 950V 7.5A I2PAKFP
| Part | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | N-Channel | 5 V | 7.5 A | -55 °C | 150 °C | TO-262-3 Full Pack I2PAK | MOSFET (Metal Oxide) | 30 V | 855 pF | 30 W | Through Hole | 950 V | TO-281 (I2PAKFP) | 500 mOhm | 30 nC | 10 V | |
STMicroelectronics | N-Channel | 4 V | 12 A | -55 °C | 150 °C | TO-262-3 Full Pack I2PAK | MOSFET (Metal Oxide) | 25 V | 983 pF | Through Hole | 650 V | TO-281 (I2PAKFP) | 380 mOhm | 10 V | 33.3 nC |