SSM3J118TU(TE85L)

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A UFM

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Unknown

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J118TU(TE85L)

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	137 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3J118TU(TE85L)	4 V	10 V	20 V	MOSFET (Metal Oxide)	30 V	1.4 A	UFM	150 °C	P-Channel	500 mW	137 pF	Surface Mount	240 mOhm

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General part information

P-Channel 30 V 1.4A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources

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