MOSFET P-CH 30V 1.4A UFM
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature | FET Type | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 V | 10 V | 20 V | MOSFET (Metal Oxide) | 30 V | 1.4 A | UFM | 150 °C | P-Channel | 500 mW | 137 pF | Surface Mount | 240 mOhm |