SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L09FUTE85LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	200 mA, 400 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	20 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs [Max]	700 mOhm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.8 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power - Max [Max]	Configuration	Supplier Device Package	FET Feature	Mounting Type	Operating Temperature	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6L09FUTE85LF	200 mA 400 mA	30 V	700 mOhm	6-TSSOP SC-88 SOT-363	20 pF	MOSFET (Metal Oxide)	300 mW	N and P-Channel	US6	Logic Level Gate	Surface Mount	150 °C	1.8 V

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General part information

Mosfet Array 30V 400mA, 200mA 300mW Surface Mount US6

Technical documentation and resources