Beta
⌘K
MOSFET N/P-CH 30V 0.4A/0.2A US6
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Power - Max [Max] | Configuration | Supplier Device Package | FET Feature | Mounting Type | Operating Temperature | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 200 mA 400 mA | 30 V | 700 mOhm | 6-TSSOP SC-88 SOT-363 | 20 pF | MOSFET (Metal Oxide) | 300 mW | N and P-Channel | US6 | Logic Level Gate | Surface Mount | 150 °C | 1.8 V |