TSM650N15CR RLG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 150V 24A 8PDFN

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Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 150V 24A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM650N15CR RLG

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1829 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	FET Type	Package / Case [y]	Package / Case [x]
Taiwan Semiconductor Corporation TSM650N15CR RLG	20 V	8-PDFN (5x6)	24 A	-55 °C	150 °C	6 V 10 V	65 mOhm	36 nC	Surface Mount	4 V	96 W	150 V	1829 pF	MOSFET (Metal Oxide)	8-PowerTDFN	N-Channel
Taiwan Semiconductor Corporation TSM650N15CS RLG	20 V	8-SOP	9 A	-55 °C	150 °C	6 V 10 V	65 mOhm		Surface Mount	4 V	12.5 W	150 V	1783 pF	MOSFET (Metal Oxide)	8-SOIC	N-Channel	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 24A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources

No documents available