TSM650 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CH 150V 24A 8PDFN
| Part | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | FET Type | Power Dissipation (Max) | Mounting Type | Package / Case | Technology | Package Length | Package Name | Package Width | Gate Charge (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1829 pF | 4 V | 6 V | 10 V | 20 V | -55 °C | 150 °C | 65 mOhm | 24 A | N-Channel | 96 W | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 5 mm | 8-PDFN | 6 mm | 36 nC 36 nC | 150 V |
Taiwan Semiconductor Corporation | 1783 pF 1783 pF | 4 V | 6 V | 10 V | 20 V | -55 °C | 150 °C | 65 mOhm | 9 A | N-Channel | 12.5 W | Surface Mount | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC 8-SOP | 3.9 mm | 37 nC 37 nC | 150 V |