Specification	C4D20120A

Capacitance	1500 pF
Current - Average Rectified (Io)	54.5 A
Current - Reverse Leakage	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-220-2
Package Name	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

C4D20120 Series

Part	Current - Average Rectified (Io) (per Diode)	Package / Case	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Voltage - Forward (Vf) (Max)	Package Name	Diode Pair Count	Diode Configuration	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Technology	Current - Average Rectified (Io)	Capacitance
Wolfspeed, Inc. C4D20120D	16 A 34 A	TO-247-3	200 µA	175 °C	-55 °C	Through Hole	1.8 V	TO-247-3	1 pair	Common Cathode	1200 V	500 mA	No Recovery Time	500 mA 500 mA	SiC (Silicon Carbide) Schottky
Wolfspeed, Inc. C4D20120H		TO-247-2	200 µA	175 °C	-55 °C	Through Hole	1.8 V	TO-247-2			1200 V	500 mA	No Recovery Time	500 mA 500 mA	SiC (Silicon Carbide) Schottky	54 A	1500 pF
Wolfspeed, Inc. C4D20120A		TO-220-2	200 µA	175 °C	-55 °C	Through Hole	1.8 V	TO-220-2			1200 V	500 mA	No Recovery Time	500 mA 500 mA	SiC (Silicon Carbide) Schottky	54.5 A	1500 pF

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