Specification	GT30N135SRA,S1E

Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	270 nC
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Package Name	TO-247
Power - Max	348 W
Switching Energy	1.3 mJ
Switching Energy (Off)	1.3 mJ
Test Condition Current	60 A
Test Condition Resistance	39 Ohm
Test Condition Voltage	300 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2.6 V
Voltage - Collector Emitter Breakdown (Max)	1350 V

GT30N135SRA Series

IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247

Part	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Package Name	Test Condition Voltage (Secondary)	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Package / Case	Input Type	Operating Temperature	Switching Energy	Switching Energy (Off)	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	Power - Max	Mounting Type	Vce(on) (Max)
Toshiba Semiconductor and Storage GT30N135SRA,S1E	1350 V	270 nC	TO-247	15 V	300 V	39 Ohm	60 A	TO-247-3	Standard	175 °C	1.3 mJ	1.3 mJ	120 A	60 A	348 W	Through Hole	2.6 V

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