GT30N135SRA Series
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
Manufacturer: Toshiba Semiconductor and Storage
Catalog
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
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IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
| Part | Voltage - Collector Emitter Breakdown (Max) | Gate Charge | Package Name | Test Condition Voltage (Secondary) | Test Condition Voltage | Test Condition Resistance | Test Condition Current | Package / Case | Input Type | Operating Temperature | Switching Energy | Switching Energy (Off) | Current - Collector Pulsed (Icm) | Current - Collector (Ic) (Max) | Power - Max | Mounting Type | Vce(on) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1350 V | 270 nC | TO-247 | 15 V | 300 V | 39 Ohm | 60 A | TO-247-3 | Standard | 175 °C | 1.3 mJ | 1.3 mJ | 120 A | 60 A | 348 W | Through Hole | 2.6 V |