SPS03N60C3AKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 3.2A TO251-3-11

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 3.2A TO251-3-11

Technical Specifications

Parameters and characteristics for this part

Specification	SPS03N60C3AKMA1

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)
Infineon Technologies SPS03N60C3AKMA1	10 V	3.2 A	N-Channel	-55 °C	150 °C	400 pF	20 V	MOSFET (Metal Oxide)	650 V	17 nC	1.4 Ohm	Through Hole	TO-251-3 Stub Leads IPAK	3.9 V	PG-TO251-3-11	38 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	666	$ 0.45

General part information

N-Channel 650 V 3.2A (Tc) 38W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources

No documents available