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MOSFET N-CH 650V 3.2A TO251-3-11
| Part | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 3.2 A | N-Channel | -55 °C | 150 °C | 400 pF | 20 V | MOSFET (Metal Oxide) | 650 V | 17 nC | 1.4 Ohm | Through Hole | TO-251-3 Stub Leads IPAK | 3.9 V | PG-TO251-3-11 | 38 W |