Specification	2N7002K-T1-GE3

Current - Continuous Drain (Id) (Ta)	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.6 nC
Input Capacitance (Ciss) (Max)	30 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	350 mW
Rds On (Max)	2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

2N7002 Series

Part	Mounting Type	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Package Name	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Vgs (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id)
Vishay Dale 2N7002E-T1-E3	Surface Mount	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	240 mA	21 pF	350 mW	3 Ohm	20 V	SC-59 SOT-23-3 TO-236-3	10 V	4.5 V	0.6 nC	2.5 V	60 V
Vishay Dale 2N7002E	Surface Mount	N-Channel			MOSFET (Metal Oxide)	SOT-23-3 (TO-236)		21 pF	350 mW	5 Ohm	20 V	SC-59 SOT-23-3 TO-236-3	10 V	4.5 V	0.6 nC	2.5 V	60 V	150 °C	340 mA
Vishay Dale 2N7002-T1-E3	Surface Mount	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-236	115 mA	50 pF 50 pF	200 mW	7.5 Ohm	20 V	SC-59 SOT-23-3 TO-236-3	10 V	5 V		2.5 V	60 V
Vishay Dale 2N7002K-T1-GE3	Surface Mount	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	300 mA	30 pF	350 mW	2 Ohm	20 V	SC-59 SOT-23-3 TO-236-3	10 V	4.5 V	0.6 nC	2.5 V	60 V

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