TLP781(D4-GRH,F)

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

TLP781(D4-GRH,F)

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Description Specifications Series Pricing CAD Documents

Description

General part information

TLP781 Series

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Technical Specifications

Parameters and characteristics for this part

Specification	TLP781(D4-GRH,F)

Current - DC Forward (If) (Max)	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	300 %
Current Transfer Ratio (Min)	150 %
Fall Time (Typ)	3 µs
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature (Max)	110 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Length	0.3 in
Package Name	4-DIP
Package Width	7.62 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Isolation	5000 Vrms
Voltage - Output (Max)	80 V

TLP781 Series

Part	Input Type	Current Transfer Ratio (Min)	Voltage - Forward (Vf) (Typ)	Rise Time (Typ)	Fall Time (Typ)	Turn On Time (Typ)	Turn Off Time (Typ)	Current - Output / Channel	Operating Temperature (Max)	Operating Temperature (Min)	Current - DC Forward (If) (Max)	Number of Channels	Mounting Type	Package Name	Output Type	Voltage - Output (Max)	Package Width	Package Length	Voltage - Isolation	Current Transfer Ratio (Max)	Vce Saturation (Max)	Package / Case
Toshiba Semiconductor and Storage TLP781(Y,F)	DC	50 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Through Hole	4-DIP	Transistor	80 V	7.62 mm	0.3 in	5000 Vrms	150 %	400 mV
Toshiba Semiconductor and Storage TLP781(D4-GRH,F)	DC	150 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Through Hole	4-DIP	Transistor	80 V	7.62 mm	0.3 in	5000 Vrms	300 %	400 mV
Toshiba Semiconductor and Storage TLP781(D4-GR-TP6,F	DC	100 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Surface Mount	4-SMD	Transistor	80 V			5000 Vrms	300 %	400 mV	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781(D4GRT6-SD,F	DC	100 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Through Hole	4-DIP	Transistor	80 V	7.62 mm	0.3 in	5000 Vrms	300 %	400 mV
Toshiba Semiconductor and Storage TLP781(TELS-TP6,F)	DC	50 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Surface Mount	4-SMD	Transistor	80 V			5000 Vrms	600 %	400 mV	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781(D4-BL,F)	DC	200 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Through Hole	4-DIP	Transistor	80 V	7.62 mm	0.3 in	5000 Vrms	600 %	400 mV
Toshiba Semiconductor and Storage TLP781(D4-Y-TP6,F)	DC	50 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Surface Mount	4-SMD	Transistor	80 V			5000 Vrms	150 %	400 mV	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781(GRL-LF6,F)	DC	100 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Surface Mount	4-SMD	Transistor	80 V			5000 Vrms	200 %	400 mV	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781(YH-TP6,F)	DC	75 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Surface Mount	4-SMD	Transistor	80 V			5000 Vrms	150 %	400 mV	4-SMD Gull Wing
Toshiba Semiconductor and Storage TLP781(YH-LF6,F)	DC	75 %	1.15 V	2 µs	3 µs	3 µs	3 µs	50 mA	110 °C	-55 °C	60 mA	1	Surface Mount	4-SMD	Transistor	80 V			5000 Vrms	150 %	400 mV	4-SMD Gull Wing

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TLP781(D4-GRH,F) | Datasheet