TLP781 Series
Manufacturer: Toshiba Semiconductor and Storage
PHOTOCOUPLER
| Part | Input Type | Current Transfer Ratio (Min) | Voltage - Forward (Vf) (Typ) | Rise Time (Typ) | Fall Time (Typ) | Turn On Time (Typ) | Turn Off Time (Typ) | Current - Output / Channel | Operating Temperature (Max) | Operating Temperature (Min) | Current - DC Forward (If) (Max) | Number of Channels | Mounting Type | Package Name | Output Type | Voltage - Output (Max) | Package Width | Package Length | Voltage - Isolation | Current Transfer Ratio (Max) | Vce Saturation (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | DC | 50 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Through Hole | 4-DIP | Transistor | 80 V | 7.62 mm | 0.3 in | 5000 Vrms | 150 % | 400 mV | |
Toshiba Semiconductor and Storage | DC | 150 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Through Hole | 4-DIP | Transistor | 80 V | 7.62 mm | 0.3 in | 5000 Vrms | 300 % | 400 mV | |
Toshiba Semiconductor and Storage | DC | 100 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Surface Mount | 4-SMD | Transistor | 80 V | 5000 Vrms | 300 % | 400 mV | 4-SMD Gull Wing | ||
Toshiba Semiconductor and Storage | DC | 100 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Through Hole | 4-DIP | Transistor | 80 V | 7.62 mm | 0.3 in | 5000 Vrms | 300 % | 400 mV | |
Toshiba Semiconductor and Storage | DC | 50 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Surface Mount | 4-SMD | Transistor | 80 V | 5000 Vrms | 600 % | 400 mV | 4-SMD Gull Wing | ||
Toshiba Semiconductor and Storage | DC | 200 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Through Hole | 4-DIP | Transistor | 80 V | 7.62 mm | 0.3 in | 5000 Vrms | 600 % | 400 mV | |
Toshiba Semiconductor and Storage | DC | 50 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Surface Mount | 4-SMD | Transistor | 80 V | 5000 Vrms | 150 % | 400 mV | 4-SMD Gull Wing | ||
Toshiba Semiconductor and Storage | DC | 100 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Surface Mount | 4-SMD | Transistor | 80 V | 5000 Vrms | 200 % | 400 mV | 4-SMD Gull Wing | ||
Toshiba Semiconductor and Storage | DC | 75 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Surface Mount | 4-SMD | Transistor | 80 V | 5000 Vrms | 150 % | 400 mV | 4-SMD Gull Wing | ||
Toshiba Semiconductor and Storage | DC | 75 % | 1.15 V | 2 µs | 3 µs | 3 µs | 3 µs | 50 mA | 110 °C | -55 °C | 60 mA | 1 | Surface Mount | 4-SMD | Transistor | 80 V | 5000 Vrms | 150 % | 400 mV | 4-SMD Gull Wing |