IRLR3110ZTRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.011 OHM, TO-252AA, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.011 OHM, TO-252AA, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR3110ZTRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	3980 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case
Infineon Technologies IRLR3110ZTRLPBF	2.5 V	140 W	14 mOhm	MOSFET (Metal Oxide)	42 A	16 V	4.5 V 10 V	48 nC	100 V	TO-252AA (DPAK)	3980 pF	N-Channel	-55 °C	175 ░C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3
Infineon Technologies IRLR3110ZTRRPBF	2.5 V	140 W	14 mOhm	MOSFET (Metal Oxide)	42 A	16 V	4.5 V 10 V	48 nC	100 V	TO-252AA (DPAK)	3980 pF	N-Channel	-55 °C	175 ░C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources