POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.011 OHM, TO-252AA, SURFACE MOUNT
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.5 V | 140 W | 14 mOhm | MOSFET (Metal Oxide) | 42 A | 16 V | 4.5 V 10 V | 48 nC | 100 V | TO-252AA (DPAK) | 3980 pF | N-Channel | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Infineon Technologies | 2.5 V | 140 W | 14 mOhm | MOSFET (Metal Oxide) | 42 A | 16 V | 4.5 V 10 V | 48 nC | 100 V | TO-252AA (DPAK) | 3980 pF | N-Channel | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 |