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SIGC18T60UNX1SA1

Obsolete
Infineon Technologies

IGBT 3 CHIP 600V WAFER

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DocumentsDatasheet

SIGC18T60UNX1SA1

Obsolete
Infineon Technologies

IGBT 3 CHIP 600V WAFER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIGC18T60UNX1SA1
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)60 A
IGBT TypeNPT
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDie
Supplier Device PackageDie
Td (on/off) @ 25°C65 ns, 15 ns
Test Condition15 V, 400 V, 2.2 Ohm, 20 A
Vce(on) (Max) @ Vge, Ic3.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SIGC18 Series

IGBT NPT 600 V 20 A Surface Mount Die

Documents

Technical documentation and resources