IGBT 3 CHIP 600V WAFER
| Part | Td (on/off) @ 25°C | Mounting Type | Current - Collector Pulsed (Icm) | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Collector (Ic) (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Test Condition | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 15 ns 65 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 3.15 V | 2.2 Ohm 15 V 20 A 400 V | |
Infineon Technologies | 36 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 15 V 16 Ohm 20 A 400 V | 250 ns |
Infineon Technologies | 36 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 15 V 16 Ohm 20 A 400 V | 250 ns |
Infineon Technologies | 21 ns 110 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 13 Ohm 15 V 20 A 300 V | |
Infineon Technologies | 21 ns 110 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 13 Ohm 15 V 20 A 300 V | |
Infineon Technologies | 21 ns 110 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 13 Ohm 15 V 20 A 300 V | |
Infineon Technologies | 36 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 15 V 16 Ohm 20 A 400 V | 250 ns |
Infineon Technologies | 21 ns 110 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 13 Ohm 15 V 20 A 300 V | |
Infineon Technologies | 21 ns 110 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 13 Ohm 15 V 20 A 300 V | |
Infineon Technologies | 36 ns | Surface Mount | 60 A | 600 V | Die | -55 °C | 150 °C | Die | 20 A | NPT | 2.5 V | 15 V 16 Ohm 20 A 400 V | 250 ns |