BST82,215
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS INTERMEDIATE LEVEL FET
BST82,215
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS INTERMEDIATE LEVEL FET
Description
General part information
BST82 Series
N-channel TrenchMOS intermediate level FET
Technical Specifications
Parameters and characteristics for this part
| Specification | BST82,215 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 190 mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 40 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 830 mW |
| Rds On (Max) | 10 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
RC Thermal Models
Reel pack for SMD, 11"; Q3/T4 product orientation
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
LFPAK MOSFET thermal design guide - Part 2
Understanding power MOSFET data sheet parameters
Reel pack for SMD, 7"; Q3/T4 product orientation
Nexperia package poster
Understanding power MOSFET data sheet parameters
Wave soldering profile
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
LFPAK MOSFET thermal design guide, Chinese version
Power MOSFET frequently asked questions and answers
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Using power MOSFETs in parallel
Failure signature of Electrical Overstress on Power MOSFETs
Questions about package outline drawings
Reflow soldering profile