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N-channel TrenchMOS intermediate level FET
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N-channel TrenchMOS intermediate level FET
N-channel TrenchMOS intermediate level FET
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | FET Type | Input Capacitance (Ciss) (Max) | Operating Temperature | Package Name | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Mounting Type | Package / Case | Technology | Rds On (Max) | Operating Temperature (Max) | Operating Temperature (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 100 V | 20 V | 190 mA | N-Channel | 40 pF | 150 °C | TO-236AB | 2 V | 5 V | 830 mW | Surface Mount | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 10 Ohm | ||
Nexperia USA Inc. | 100 V | 20 V | 190 mA | N-Channel | 40 pF | TO-236AB | 2 V | 5 V | 830 mW | Surface Mount | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 10 Ohm | 150 °C | -65 °C |