SSM5H16TU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A UFV

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A UFV

Technical Specifications

Parameters and characteristics for this part

Specification	SSM5H16TU,LF

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.9 nC
Input Capacitance (Ciss) (Max) @ Vds	123 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Power Dissipation (Max) [Max]	500 mW
Supplier Device Package	UFV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Feature	Technology	FET Type	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM5H16TU,LF	150 °C	1.9 A	123 pF	500 mW	1 V	Schottky Diode (Isolated)	MOSFET (Metal Oxide)	N-Channel	12 V	Surface Mount	1.8 V 4 V	6-SMD (5 Leads) Flat Leads	UFV	30 V	1.9 nC

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General part information

N-Channel 30 V 1.9A (Ta) 500mW (Ta) Surface Mount UFV

Technical documentation and resources