SSM5H16 Series
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
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Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
| Part | Power Dissipation (Max) | Operating Temperature | Mounting Type | Gate Charge (Max) | Technology | Rds On (Max) | Package Leads | Package Name | FET Feature | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) (Ta) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 500 mW | 150 °C | Surface Mount | 1.9 nC | MOSFET (Metal Oxide) | 133 mOhm | 5 Leads | 6-SMD UFV | Schottky Diode (Isolated) | 123 pF | 1 V | 1.8 V | 4 V | 30 V | N-Channel | 1.9 A | 12 V |