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MOSFET N-CH 30V 1.9A UFV
| Part | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | FET Feature | Technology | FET Type | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 1.9 A | 123 pF | 500 mW | 1 V | Schottky Diode (Isolated) | MOSFET (Metal Oxide) | N-Channel | 12 V | Surface Mount | 1.8 V 4 V | 6-SMD (5 Leads) Flat Leads | UFV | 30 V | 1.9 nC |