GT60N321(Q)

Obsolete

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

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Obsolete

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

Technical Specifications

Parameters and characteristics for this part

Specification	GT60N321(Q)

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	170 W
Reverse Recovery Time (trr)	2.5 µs
Supplier Device Package	TO-3P(LH)
Td (on/off) @ 25°C	700 ns
Td (on/off) @ 25°C	330 ns
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1000 V

Part	Power - Max [Max]	Package / Case	Operating Temperature	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Mounting Type	Vce(on) (Max) @ Vge, Ic
Toshiba Semiconductor and Storage GT60N321(Q)	170 W	TO-3PL	150 °C	TO-3P(LH)	60 A	700 ns	330 ns	1000 V	2.5 µs	120 A	Through Hole	2.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)

Technical documentation and resources

No documents available