Beta
⌘K
IGBT 1000V 60A 170W TO3P LH
| Part | Power - Max [Max] | Package / Case | Operating Temperature | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) [Max] | Reverse Recovery Time (trr) | Current - Collector Pulsed (Icm) | Mounting Type | Vce(on) (Max) @ Vge, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 170 W | TO-3PL | 150 °C | TO-3P(LH) | 60 A | 700 ns | 330 ns | 1000 V | 2.5 µs | 120 A | Through Hole | 2.8 V |